Surface properties of semiconductors from post-illumination photovoltage transient

Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior after is turned off serve as means characterize several key electronic properties semiconductor, which are fundamental importance in numerous device applications, such transistors and solar cells. In this paper, we develop model for use it experimentally layers nanowires semiconductors. Our results suggest that what has previously been considered logarithmic decay rather rough approximation. Due known limited frequency bandwidth probe method, most previous Kelvin-probe-based methods have “slow responding” The propose extends range applicability.